Extrinsic performance of flexible graphene FET with graphene oxide gate dielectric

A study is performed on extrinsic performance of graphene field effect transistor on a flexible polyimide substrate with graphene oxide gate dielectric. Using self-consistent calculation, it is shown that quantum capacitance retains a nonzero minimum at the dirac point. Excellent electron and hole mobilities and maximum on current of 137 μA are obtained for this flexible device. RF analysis has shown that it is capable of amplifying input signal with frequency as high as 1.71 GHz. We have demonstrated that graphene field effect transistor shows higher leakage current than conventional transistor.