DocumentCode
3411686
Title
A study of EEPROM endurance correlation with wafer level reliability data
Author
Wilkie, David ; Hensen, Mark
Author_Institution
Microchip Technol. Inc., USA
fYear
1995
fDate
22-25 Oct. 1995
Firstpage
55
Lastpage
60
Abstract
The results of a study of EEPROM endurance correlation with various wafer level reliability tests are presented. Samples from multiple wafer lots of various EEPROM array sizes were cycled, and the data were compared to wafer level data taken from the same wafer lots. The results show that TDDB studies alone do not correlate well with endurance. Other data, such as yield studies and alignment measurements, also do not completely correlate with endurance. Despite this we believe that the wafer level tests such as TDDB being performed now are good indicators of overall oxide quality.
Keywords
EPROM; cellular arrays; integrated circuit reliability; integrated circuit yield; EEPROM endurance correlation; TDDB studies; alignment measurements; array sizes; multiple wafer lots; overall oxide quality; wafer level reliability data; yield studies; Assembly; Capacitors; Dielectrics; EPROM; Electrons; Monitoring; Performance evaluation; Production facilities; Testing; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop, 1995. Final Report., International
Conference_Location
Lake Tahoe, CA, USA
Print_ISBN
0-7803-2705-5
Type
conf
DOI
10.1109/IRWS.1995.493576
Filename
493576
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