DocumentCode
3411688
Title
Quantum capacitance modeling of graphene nanoribbons in nondegenerate regime considering edge bond relaxation and third nearest neighbor interaction effect
Author
Hassan, Asif ; Rana, M.S.
Author_Institution
Dept. of Electron. & Commun. Eng., Khuina Univ. of Eng. & Technol., Khulna, Bangladesh
fYear
2013
fDate
19-21 Dec. 2013
Firstpage
94
Lastpage
99
Abstract
Graphene nanoribbon(GNR) provides a considerable band gap in graphene based nanodevice. In the issue of opening a band gap, the edge effect plays an important role for realizing the practical bandgap energy. Quantum capacitance is one of the most significant parameters which controls the device speed is also influenced by edge effect. In this paper we will observe bandgap for edge effect in energy dispersion curve at different states of energy level. Then we will observe quantum capacitance for corresponding energy in nondegenerate regime considering edge bond relaxation and the third nearest neighbor (3NN) interaction effects. From which we will analyze what amount of device delay occurs for practical GNR based device.
Keywords
capacitance; delays; energy gap; graphene; nanoribbons; device delay; edge bond relaxation; edge effect; energy dispersion curve; energy level; graphene based nanodevice; nondegenerate regime; practical band gap energy; practical graphene nanoribbons based device; quantum capacitance; quantum capacitance modeling; third nearest neighbor interaction effect; Delays; Dispersion; Graphene; Logic gates; Photonic band gap; Quantum capacitance; bandgap; device delay; edge efect; energy dispersion curve; nondegenerate regime; quantum capacitance;
fLanguage
English
Publisher
ieee
Conference_Titel
Advances in Electrical Engineering (ICAEE), 2013 International Conference on
Conference_Location
Dhaka
Print_ISBN
978-1-4799-2463-9
Type
conf
DOI
10.1109/ICAEE.2013.6750312
Filename
6750312
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