Effect of high k-dielectric as gate oxide on short channel effects of junction-less transistor

In this work, short channel effects such as drain induced barrier lowering, sub-threshold swing, on-current and off-current and on-off ratio have been analyzed for different oxide materials as gate oxide for double gate junction-less transistors by using device simulator. Just like inversion mode MOSFETS, junction-less transistors show better short channel effects when high-k dielectrics are used.