• DocumentCode
    3411799
  • Title

    Reduced oxide reliability due to multilevel metalization process

  • Author

    Noguchi, Ko ; Horiuchi, Tadahiko

  • Author_Institution
    ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
  • fYear
    1995
  • fDate
    22-25 Oct. 1995
  • Firstpage
    98
  • Lastpage
    103
  • Abstract
    The effect of multilevel metalization process on oxide reliability was investigated. In addition to the well-known charging damage from plasma etching, other types of damages were identified. They are non-electrical damage due to ILD process, and charging damage due to plasma oxide deposition. Recovery effects of plasma induced charging damage were also observed. Since the damage responds differently to measurement depending on the stress bias condition, an appropriate choice of stress condition is important to identify the nature of the damage.
  • Keywords
    MOS integrated circuits; hot carriers; insulating thin films; integrated circuit metallisation; integrated circuit reliability; monitoring; surface charging; ILD process; monitoring; multilevel metalization process; nonelectrical damage; oxide reliability; plasma etching; plasma induced charging damage; plasma oxide deposition; recovery effects; stress bias condition; Annealing; Antenna measurements; Artificial intelligence; Degradation; Etching; Hot carriers; Low voltage; MOSFETs; Plasma applications; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop, 1995. Final Report., International
  • Conference_Location
    Lake Tahoe, CA, USA
  • Print_ISBN
    0-7803-2705-5
  • Type

    conf

  • DOI
    10.1109/IRWS.1995.493582
  • Filename
    493582