DocumentCode
3411799
Title
Reduced oxide reliability due to multilevel metalization process
Author
Noguchi, Ko ; Horiuchi, Tadahiko
Author_Institution
ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
fYear
1995
fDate
22-25 Oct. 1995
Firstpage
98
Lastpage
103
Abstract
The effect of multilevel metalization process on oxide reliability was investigated. In addition to the well-known charging damage from plasma etching, other types of damages were identified. They are non-electrical damage due to ILD process, and charging damage due to plasma oxide deposition. Recovery effects of plasma induced charging damage were also observed. Since the damage responds differently to measurement depending on the stress bias condition, an appropriate choice of stress condition is important to identify the nature of the damage.
Keywords
MOS integrated circuits; hot carriers; insulating thin films; integrated circuit metallisation; integrated circuit reliability; monitoring; surface charging; ILD process; monitoring; multilevel metalization process; nonelectrical damage; oxide reliability; plasma etching; plasma induced charging damage; plasma oxide deposition; recovery effects; stress bias condition; Annealing; Antenna measurements; Artificial intelligence; Degradation; Etching; Hot carriers; Low voltage; MOSFETs; Plasma applications; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop, 1995. Final Report., International
Conference_Location
Lake Tahoe, CA, USA
Print_ISBN
0-7803-2705-5
Type
conf
DOI
10.1109/IRWS.1995.493582
Filename
493582
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