Dielectric and polarization characteristics of sol-gel derived lead zirconate titanate thin films: effect of erbium doping

Author

Majumder, S.B. ; Dixit, A. ; Roy, B. ; Jia, W. ; Katiyar, R.S.

Author_Institution

Dept. of Phys., Univ. of Puerto Rico, San Juan, Puerto Rico

fYear

2002

fDate

28 May-1 June 2002

Firstpage

111

Lastpage

114

Abstract

We have demonstrated that for up to I at % Er doped PZT (53/47) thin films the dielectric constant, switchable polarization, and the dielectric breakdown voltage increase. The fatigue resistance was found to increase with higher Er contents (3-5 at%). The improvement of the dielectric and ferroelectric properties for up to 1 at% Er doping has been argued to be related to the relative site occupancy of Er as a function of Er contents in PZT host lattice.

Keywords

dielectric polarisation; electric breakdown; erbium; ferroelectric switching; ferroelectric thin films; lead compounds; leakage currents; permittivity; Er doping; PZT:Er; PbZrO3TiO3:Er; X-ray diffractograms; defect dipole complexes; dielectric breakdown voltage; dielectric constant; fatigue resistance; ferroelectric properties; leakage current; loss tangent; permittivity; photoluminescence spectra; polycrystalline perovskite phase; relative site occupancy; sol-gel derived thin films; switchable polarization; Breakdown voltage; Dielectric breakdown; Dielectric constant; Dielectric thin films; Doping; Erbium; Fatigue; Ferroelectric materials; Polarization; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2002. ISAF 2002. Proceedings of the 13th IEEE International Symposium on

ISSN

1099-4734

Print_ISBN

0-7803-7414-2

Type

conf

DOI

10.1109/ISAF.2002.1195883

Filename

1195883