Title :
Structure control of ferroelectric PbTiO3 thin films using SrTiO3 buffer layer prepared by metalorganic decomposition
Author :
Fukuda, Hisashi ; Kimura, Kenji ; Salam, K.M.A. ; Nomura, Shigeru
Author_Institution :
Fac. of Eng., Muroran Inst. of Technol., Hokkaido, Japan
fDate :
28 May-1 June 2002
Abstract :
Polycrystalline PbTiO3 thin films were successfully formed on SrTiO3 buffer layer by metalorganic decomposition (MOD) technique. The PbTiO3 films showed the perovskite structure after annealing at 700°C for 30 min in N2 ambient. A higher dielectric constant of 157 is obtained in the PbTiO3/SrTiO3/Si structure. The hysteresis loop in the capacitance-voltage curves of the MFIS configuration indicated a memory window of 1.2 V with a programming voltage swing of ±5 V due to polarization effect. The memory window will satisfy the practical application of the MFIS-FET memories operating at low voltage in future ULSIs.
Keywords :
Raman spectra; X-ray diffraction; annealing; atomic force microscopy; capacitance; crystal microstructure; dielectric hysteresis; ellipsometry; ferroelectric storage; ferroelectric thin films; lead compounds; liquid phase deposited coatings; permittivity; surface structure; MFIS-FET memories; PbTiO3; Raman spectra; SrTiO3; X-ray diffraction; annealing; atomic force microscopy; buffer layer; capacitance-voltage curves; dielectric constant; ellipsometry; ferroelectric thin films; hysteresis loop; memory window; metalorganic decomposition; microstructure; perovskite structure; polycrystalline thin films; programming voltage swing; structure control; surface morphology; Annealing; Buffer layers; Capacitance-voltage characteristics; Dielectric thin films; Ferroelectric films; Ferroelectric materials; High-K gate dielectrics; Hysteresis; Polarization; Voltage;
Conference_Titel :
Applications of Ferroelectrics, 2002. ISAF 2002. Proceedings of the 13th IEEE International Symposium on
Print_ISBN :
0-7803-7414-2
DOI :
10.1109/ISAF.2002.1195891
