Title :
Low-temperature preparation of ferroelectric Ba2NaNb5O15 thin films by pulsed laser deposition
Author :
Ohnuki, K. ; Higuchi, T. ; Takayasu, M. ; Sogawa, M. ; Tsukamoto, T.
Author_Institution :
Dept. of Appl. Phys., Tokyo Univ. of Sci., Japan
fDate :
28 May-1 June 2002
Abstract :
Ferroelectric Ba2NaNb5O15 (BNN) thin films were prepared on MgO (100) substrates by pulsed laser deposition method. When the laser power density and repetition frequency were fixed at 200 mJ/cm2 and 5 Hz, respectively, the c-axis oriented BNN thin film was obtained at substrate temperature of 650°C. The interface between the c-axis oriented BNN thin film and MgO substrate was very smooth. The band gap of the c-axis oriented BNN thin film was about 3.1 eV, which accords to that of the BNN single crystal.
Keywords :
barium compounds; energy gap; ferroelectric materials; ferroelectric thin films; pulsed laser deposition; sodium compounds; 3.1 eV; 5 Hz; 650 degC; Ba2NaNb5O15; MgO; MgO (100) substrates; band gap; ferroelectric Ba2NaNb5O15 thin films; laser power density; low-temperature preparation; pulsed laser deposition; repetition frequency; Ferroelectric materials; Frequency; Optical pulses; Photonic band gap; Power lasers; Pulsed laser deposition; Sputtering; Substrates; Temperature; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 2002. ISAF 2002. Proceedings of the 13th IEEE International Symposium on
Print_ISBN :
0-7803-7414-2
DOI :
10.1109/ISAF.2002.1195897
