Title :
Preparation and electrical property of β-PVDF/PbTiO3 thin films
Author :
Wang, C.M. ; Kao, M.C. ; Chen, Y.C.
Author_Institution :
Dept. of Electr. Eng., Cheng-Shiu Inst. of Technol., Kaohsiung, Taiwan
fDate :
28 May-1 June 2002
Abstract :
Ferroelectric polymer/ceramic structure thin films were fabricated on Pt/SiO2/Si substrates using a sol-gel method. The bilayer thin film was composed of polar β-phase poly(vinylidene fluoride) (PVDF) and 1 μm thickness of polycrystalline lead titanate (PbTiO3) thin film. By changing the concentrations of PVDF solutions (0.6∼1.0 M), various thickness of PVDF thin films (50-580 nm) were obtained, and the effects of various processing parameters on the characteristics of PVDF/PbTiO3 thin films were studied. The characteristic of the β phase at infrared spectrum of 511 and 840 cm-1 can be observed in PVDF film crystallized at 65°C for 2 h. With the increase of the PVDF thickness of the PVDF/PbTiO3 films, the relative dielectric constant (εr) decreased from 63 to 20 and the leakage current density (J) also decreased from 1.54 × 10-6 to 3.86 × 10-7 A/cm2.
Keywords :
crystallisation; ferroelectric ceramics; ferroelectric materials; ferroelectric thin films; infrared spectra; lead compounds; leakage currents; liquid phase deposited coatings; permittivity; polymer films; sol-gel processing; β-PVDF/PbTiO3 thin films; 2 h; 50 to 580 nm; 511 cm-1; 65 C; 840 cm-1; PbTiO3; Pt/SiO2/Si substrates; bilayer thin film; electrical property; ferroelectric polymer/ceramic structure thin films; leakage current density; polar β-phase poly(vinylidene fluoride); relative dielectric constant; sol-gel method; Ceramics; Crystallization; Ferroelectric materials; Infrared spectra; Lead; Polymer films; Semiconductor thin films; Substrates; Titanium compounds; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 2002. ISAF 2002. Proceedings of the 13th IEEE International Symposium on
Print_ISBN :
0-7803-7414-2
DOI :
10.1109/ISAF.2002.1195898
