Title :
WLR fast tests for characterization of a BiCMOS process and identification of mobile ionic contamination
Author :
Poulter, M. ; Brisbin, D.
Author_Institution :
Nat. Semicond. Corp., Santa Clara, CA, USA
Abstract :
Summary form only given. WLR can play a key role in process development. Reliability issues can be identified and fixed early in the development process. The WLR fast test self heated gate structure is ideally suited for monitoring and characterizing mobile ionic contamination. Correlation between the WLR self heated gate structure and traditional hot chuck bias stress measurement can be demonstrated. Activation of the drift process is easily obtainable from the plots. The throughput of the WLR test vastly exceeds the traditional hot chuck test allowing more comprehensive in line screening and more rapid data generation and problem solving. The WLR test can be used to reproduce all the experiments required when characterizing a mobile ionic problem. Control parameters include voltage bias, temperature, stress time, hysteresis, and bake recoverability.
Keywords :
BiCMOS integrated circuits; chemical analysis; impurities; integrated circuit measurement; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; BiCMOS process; WLR fast test self heated gate structure; bake recoverability; data generation; drift process activation; hot chuck bias stress measurement; hysteresis; in line screening; intermetal dielectrics; mobile ionic contamination identification; monitoring; process development; reliability issues; stress time; temperature; throughput; voltage bias; Automatic testing; BiCMOS integrated circuits; Contamination; Monitoring; Problem-solving; Stress control; Stress measurement; Temperature control; Throughput; Voltage control;
Conference_Titel :
Integrated Reliability Workshop, 1995. Final Report., International
Conference_Location :
Lake Tahoe, CA, USA
Print_ISBN :
0-7803-2705-5
DOI :
10.1109/IRWS.1995.493601
