Title :
Dielectric properties of CaCu3Ti4O12 thin films
Author :
Cho, Kyuho ; Wu, Naijuan ; Ignatiev, Alex ; Li, Jianren
Author_Institution :
Texas Center for Supercond., Houston Univ., TX, USA
fDate :
28 May-1 June 2002
Abstract :
High dielectric CaCu3Ti4O12 (CCTO) thin films were successfully grown on LaAlO3(100) (LAO) crystalline substrates and on SrRuO3(SRO) conductive films on LAO substrates by the pulsed laser deposition (PLD) method. Microstructure and dielectric properties of (001) oriented (CCTO) epitaxial thin films were evaluated, and compared to those of CCTO polycrystalline bulk samples by x-ray diffraction, DC conductivity and dielectric measurements. The gigantic dielectric constant of greater than 20,000 in polycrystalline CCTO can be accounted for by the internal barrier layer capacitance (IBLC) model. However, this model fails to explain the large dielectric constant behavior for epitaxial CCTO/SRO/LAO thin films which also show high DC conductivity. XPS analysis indicated that oxygen vacancies could be a possible factor responsible for the low resistivity of thin film.
Keywords :
X-ray diffraction; X-ray photoelectron spectra; calcium compounds; copper compounds; dielectric materials; dielectric thin films; electrical conductivity; electrical resistivity; permittivity; vacancies (crystal); CCTO; CaCu3Ti4O12; CaCu3Ti4O12 thin films; DC conductivity; IBLC model; LaAlO3; XPS; dielectric constant; dielectric properties; microstructure; oxygen vacancies; pulsed laser deposition; resistivity; x-ray diffraction; Conductive films; Conductivity; Crystal microstructure; Crystallization; Dielectric constant; Dielectric substrates; Dielectric thin films; Pulsed laser deposition; Semiconductor process modeling; Sputtering;
Conference_Titel :
Applications of Ferroelectrics, 2002. ISAF 2002. Proceedings of the 13th IEEE International Symposium on
Print_ISBN :
0-7803-7414-2
DOI :
10.1109/ISAF.2002.1195901
