Title :
Dielectric step stress and life stress comparison
Author :
Strong, A. ; Wu, E. ; Bolam, R.
Author_Institution :
IBM Mictroelectron., Essex Junction, VT, USA
Abstract :
Voltage life-stress results have been compared with voltage step stress results. The figure of merit chosen for this comparison was TDDB. Two different oxides were used, one having a thickness of 13.5 nm and the other having a thickness of 8.2 nm.
Keywords :
dielectric thin films; electric breakdown; failure analysis; integrated circuit reliability; integrated circuit testing; life testing; silicon compounds; step response; 13.5 nm; 8.2 nm; SiO/sub 2/; TDDB; dielectric films; oxides; thickness; time dependent dielectric breakdown; voltage life-stress; voltage step stress; Acceleration; Dielectrics; Electric breakdown; Hardware; Microelectronics; Stress; Testing; Voltage;
Conference_Titel :
Integrated Reliability Workshop, 1995. Final Report., International
Conference_Location :
Lake Tahoe, CA, USA
Print_ISBN :
0-7803-2705-5
DOI :
10.1109/IRWS.1995.493602
