• DocumentCode
    3412202
  • Title

    Rf-magnetron sputtered ferroelectric (Na,K)NbO3 films

  • Author

    Blomqvist, Mats ; Koh, Jung-Hyuk ; Khartsev, Sergey I. ; Grishin, Alex M.

  • Author_Institution
    Dept. of Condensed Matter Phys., R. Inst. of Technol., Stockholm, Sweden
  • fYear
    2002
  • fDate
    28 May-1 June 2002
  • Firstpage
    195
  • Lastpage
    198
  • Abstract
    Sodium potassium niobate (Na,K)NbO3 (NKN) thin films were grown by rf-magnetron sputtering from stoichiometric Na0.5K0.5NbO3 target on LaAlO3 (LAO) single crystals and polycrystalline Pt80Ir20 (PtIr) substrates. NKN films on polycrystalline PtIr substrates were found to be preferentially (00l) oriented while XRD measurements reveal epitaxial quality of NKN/LaAlO3 film structures. The ferroelectric state in NKN/PtIr films at room temperature is indicated by polarization loops with polarization as high as 33.4 μC/cm2 at 700 kV/cm remnant polarization of 9.9 μC/cm2, and coercive field of 91 kV/cm. I-V characteristics of vertical Au/NKN/PtIr capacitive cells and planar Au/NKN/LAO interdigital capacitors (IDCs) showed very good insulating properties. For NKN IDC the leakage current density was in the order of 30 nA/cm2 at 400 kV/cm. Rf dielectric spectroscopy demonstrates low loss, low frequency dispersion, and high voltage tunability both for vertical Au/NKN/PtIr and planar interdigital Au/NKN/LAO capacitors.
  • Keywords
    dielectric losses; dielectric polarisation; ferroelectric capacitors; ferroelectric thin films; potassium compounds; sodium compounds; sputtered coatings; I-V characteristics; IDCs; LaAlO3; NKN; Na0.5K0.5NbO3; NaKNbO3; Pt80Ir20; Rf dielectric spectroscopy; XRD; coercive field; epitaxial quality; low frequency dispersion; low loss; magnetron sputtered ferroelectric (Na,K)NbO3 films; polarization loops; remnant polarization; voltage tunability; Capacitors; Crystals; Dielectric losses; Ferroelectric films; Ferroelectric materials; Gold; Niobium compounds; Polarization; Sputtering; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 2002. ISAF 2002. Proceedings of the 13th IEEE International Symposium on
  • ISSN
    1099-4734
  • Print_ISBN
    0-7803-7414-2
  • Type

    conf

  • DOI
    10.1109/ISAF.2002.1195903
  • Filename
    1195903
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3412202