Title :
Ultra-low voltage circuits and processor in 180nm to 90nm technologies with a swapped-body biasing technique
Author :
Narendra, Siva ; Tschanz, James ; Hofsheier, Joseph ; Bloechel, Bradley ; Vangal, Sriram ; Hoskote, Yatin ; Tang, Stephen ; Somasekhar, Dinesh ; Keshavarzi, Ali ; Erraguntla, Vasantha ; Dermer, Greg ; Borkar, Nitin ; Borkar, Shekhar ; De, Vivek
Author_Institution :
Intel Corp., Hillsboro, OR, USA
Abstract :
A low-voltage swapped-body biasing technique where PMOS bodies are connected to ground and NMOS bodies to Vcc is evaluated. Available measurements show more than 2.6x frequency improvement at 0.5V Vcc and the ability to reduce Vcc by 0.2V for the same frequency compared to no body bias in 180 to 90nm CMOS technologies.
Keywords :
CMOS logic circuits; integrated circuit design; low-power electronics; microprocessor chips; nanoelectronics; 180 nm; 90 nm; NMOS bodies; PMOS bodies; adaptive body biasing; circuit functionality; frequency improvement; off-chip power supply; on-chip bias generators; static circuit chains; swapped-body biasing technique; ultralow voltage circuits; Circuit testing; Delay; Energy efficiency; Frequency measurement; Logic devices; Logic testing; MOS devices; Power measurement; Semiconductor device measurement; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International
Print_ISBN :
0-7803-8267-6
DOI :
10.1109/ISSCC.2004.1332641
