DocumentCode
3412280
Title
Mixed body-bias techniques with fixed Vt and Ids generation circuits
Author
Sumita, M. ; Sakiyama, S. ; Kinoshita, Moto ; Araki, Yuichi ; Ikeda, Yasuhiro ; Fukuoka, Kazuki
Author_Institution
Matsushita Electr. Ind., Nagaokakyo, Japan
fYear
2004
fDate
15-19 Feb. 2004
Firstpage
158
Abstract
In sub-1V CMOS VLSIs, body-bias generation circuits are proposed in which Ids,, and Vt, of PMOS/NMOS are always fixed. The mixed body bias techniques result in positive temperature dependence of the delay, an 85% reduction of the delay variation, and a 75% improvement in the power consumption of an SRAM on a mobile processor.
Keywords
CMOS logic circuits; CMOS memory circuits; SRAM chips; VLSI; integrated circuit design; low-power electronics; microprocessor chips; CMOS VLSI; SRAM; body-bias generation circuits; correlation diagram; delay variation; domino circuits; low power; mixed body-bias techniques; mobile processor; positive temperature dependence; power consumption; readout circuit; CMOS process; CMOS technology; Circuit testing; Intrusion detection; MOS devices; Radio frequency; Random access memory; Semiconductor device measurement; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International
ISSN
0193-6530
Print_ISBN
0-7803-8267-6
Type
conf
DOI
10.1109/ISSCC.2004.1332642
Filename
1332642
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