Title :
An 800 mW 10 Gb Ethernet transceiver in 0.13 μm CMOS
Author :
Sidiropoulos, S. ; Acharya, N. ; Pak Chau ; Dao, Jerome ; Feldman, Alexander ; Haw-Jyh Liaw ; Loinaz, M. ; Narayanaswami, R.S. ; Portmann, Christopher ; Rabii, S. ; Salleh, A. ; Sheth, Swapneel ; Vleugels, K. ; Yue, Peng ; Stark, Dylan
Author_Institution :
Aeluros, Mountain View, CA, USA
Abstract :
A fully integrated 10 Gb Ethernet transceiver IC using a standard 0.13 μm CMOS process integrates 10.3 Gb/s and 4×3.12 Gb/s analog front-ends, with Layer-1 coding and management functionality. The 2.5×5 mm2 IC exceeds both 10GE and SONET specifications, and dissipates 800 mW from its 1.2/2.5 V supplies.
Keywords :
CMOS integrated circuits; SONET; integrated circuit measurement; local area networks; telecommunication standards; transceivers; 1.2 V; 10.3 Gbit/s; 10GE specifications; 12.48 Gbit/s; 2.5 V; 2.5 mm; 3.12 Gbit/s; 5 mm; 800 mW; CMOS Ethernet transceiver; Layer-1 coding functionality; SONET specifications; analog front-ends; fully integrated Ethernet transceiver IC; management functionality; power dissipation; Application specific integrated circuits; CMOS integrated circuits; CMOS process; Clocks; Ethernet networks; Frequency; Optical filters; Phase locked loops; Resonance; Transceivers;
Conference_Titel :
Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International
Print_ISBN :
0-7803-8267-6
DOI :
10.1109/ISSCC.2004.1332647
