DocumentCode
3412378
Title
Characteristics of low-temperature-prepared (Ba,Sr)TiO3 films post treated by novel excimer laser annealing
Author
Shye, Der-Chi ; Chiou, Bi-Shiou ; Hwang, Chuan-Chou ; Chen, Jyh-Shin ; Su, I-Wei ; Chou, Chen-Chia ; Cheng, Huang-Chung
Author_Institution
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2002
fDate
28 May-1 June 2002
Firstpage
227
Lastpage
230
Abstract
Thin (Ba0.5Sr0.5)TiO3 (BST) films were sputtered on Pt/TiN/Ti/Si multilayer substrates at very low temperature (150°C). A novel process, using wavelength 248-nm KrF excimer laser annealing (ELA), has been undertaken to implement barium strontium titanate (BST) films at a low process temperature of 300°C. The crystallinity and dielectric constant are greatly improved after ELA treatment. In this work, the variation of texture was investigated. Besides, the escaped oxygen atoms from BST films were detected in-situ using a residual gas analyzer (RGA) during ELA process. Thus, the degradation of upper surface is strongly influenced by the laser energy fluence for an ELA-BST film.
Keywords
barium compounds; ferroelectric materials; ferroelectric thin films; laser beam annealing; permittivity; sputtered coatings; strontium compounds; texture; (Ba0.5Sr0.5)TiO3; 150 degC; 248 nm; 300 C; Ba0.5Sr0.5TiO3; KrF; Pt-TiN-Ti-Si; Pt/TiN/Ti/Si multilayer substrates; crystallinity; dielectric constant; excimer laser annealing; low-temperature-prepared (Ba,Sr)TiO3 films; residual gas analyzer; upper surface degradation; Annealing; Barium; Binary search trees; Dielectric substrates; Dielectric thin films; Nonhomogeneous media; Semiconductor films; Strontium; Temperature; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2002. ISAF 2002. Proceedings of the 13th IEEE International Symposium on
ISSN
1099-4734
Print_ISBN
0-7803-7414-2
Type
conf
DOI
10.1109/ISAF.2002.1195911
Filename
1195911
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