• DocumentCode
    3412497
  • Title

    Microstructural and dielectric properties of ceramics based on K2Sr4Nb10O30 and BaTiO3

  • Author

    Chen, Renzheng ; Wang, Xiaohui ; Li, Longtu ; Gui, Zhilun

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Tsinghua Univ., Beijing, China
  • fYear
    2002
  • fDate
    28 May-1 June 2002
  • Firstpage
    251
  • Lastpage
    254
  • Abstract
    The search for dielectric materials with a high dielectric constant and ε curves with a flat profile is still ongoing. K2Sr4Nb10O30-based dielectric ceramics, having the tetragonal tungsten bronze structure (TTB), which display a high permittivity and flat ε curves meeting the X7R specification. BaTiO3-based ferroelectric ceramics are classic dielectric materials for ceramic capacitors. Results were obtained by mixing compounds with closely related structures, such as the tetragonal tungsten bronze (TTB) niobate K2Sr4Nb10O30 (KSN) and the perovskite BaTiO3 (BT). Phase compositions were analyzed by using XRD and the microstructure was investigated by SEM. The present study explores the dielectric curves ε of the composition (K2Sr4Nb10O30)x·(BaTiO3)1-x with x = 0.1-0.9 where x means the weight ratio of KSN. The dielectric constant at room temperature is lowest at x = 0.4. When x is between 0.4 and 0.7, ε curves of the ceramic composites present a linear decrease with the temperature. Two different phases, TTB and perovskite type, are present after sintering.
  • Keywords
    X-ray diffraction; barium compounds; crystal microstructure; ferroelectric ceramics; permittivity; potassium compounds; scanning electron microscopy; strontium compounds; (K2Sr4Nb10O30)x·(BaTiO3)1-x; (K2Sr4Nb10O30)x(BaTiO3)1-x; BaTiO3; BaTiO3-based ferroelectric ceramics; K2Sr4Nb10O30; SEM; XRD; ceramic capacitors; dielectric properties; flat profile; high dielectric constant; microstructure; phase compositions; tetragonal tungsten bronze structure; Ceramics; Dielectric materials; Displays; Ferroelectric materials; High-K gate dielectrics; Niobium; Permittivity; Strontium; Temperature; Tungsten;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 2002. ISAF 2002. Proceedings of the 13th IEEE International Symposium on
  • ISSN
    1099-4734
  • Print_ISBN
    0-7803-7414-2
  • Type

    conf

  • DOI
    10.1109/ISAF.2002.1195917
  • Filename
    1195917