Title :
Single-ended mixer with reduced LO penetration
Author :
Fikart, J. ; Acimovic, P.
Author_Institution :
MPR Teltech Ltd., Burnaby, BC, Canada
Abstract :
A broadband single-ended MESFET mixer is described that utilizes a new mixing mode in a dual-gate MESFET. It has reduced local oscillator (LO) penetration in comparison to the usual mixing mode of dual-gate mixers described in the literature. The measured LO reduction is 9 dB. This can be advantageous especially in the case of broadband upconverters, where the overlapping LO and RF bands can make suppression of the LO impossible
Keywords :
MMIC; Schottky gate field effect transistors; field effect integrated circuits; mixers (circuits); LO reduction; broadband single-ended MESFET mixer; broadband upconverters; dual-gate MESFET; local oscillator; microwave mixer; monolithic implementation; reduced LO penetration; Bandwidth; Degradation; Frequency conversion; Frequency measurement; Gain measurement; Local oscillators; MESFET circuits; Mixers; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Communications, Computers and Signal Processing, 1991., IEEE Pacific Rim Conference on
Conference_Location :
Victoria, BC
Print_ISBN :
0-87942-638-1
DOI :
10.1109/PACRIM.1991.160682