New high temperature morphotropic phase boundary piezoelectric ceramics

Author

Shrout, Thomas R. ; Eitel, Richard ; Randall, Clive A. ; Alberta, Edward ; Rehrig, Paul W.

Author_Institution

Mater. Res. Lab., Pennsylvania State Univ., University Park, PA, USA

fYear

2002

fDate

28 May-1 June 2002

Firstpage

277

Lastpage

280

Abstract

New morphotropic phase boundary (MPB) piezoelectrics with ferroelectric phase transitions (T_c) exceeding that of PbZrO₃-PbTiO₃ (PZT) were investigated. Based on a perovskite tolerance factor - T_c relationship, new high T_c MPB systems were projected in Bi(Me)O₃-PbTiO₃ systems, where Me is a relatively large B⁺³-site cation. For the (1-x)BiScO₃-(x)PbTiO₃ solid solution, a MPB was found at x-0.64 separating the rhombohedral and tetragonal phases, with correspondingly enhanced dielectric and piezoelectric properties. A transition temperature T_c of ∼450°C was determined with higher T_cs projected with lower tolerance factor systems.

Keywords

bismuth compounds; capacitance; dielectric losses; ferroelectric transitions; lead compounds; piezoceramics; capacitance; ceramic processing; dielectric loss; enhanced dielectric properties; enhanced piezoelectric properties; ferroelectric phase transitions; high temperature morphotropic phase boundary; ionic radii; perovskite tolerance factor; piezoelectric ceramics; polycrystalline ceramics; rhombohedral phases; tetragonal phases; Ceramics; Dielectrics; Educational institutions; Equations; Ferroelectric materials; Laboratories; Piezoelectric materials; Piezoelectric transducers; Solids; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2002. ISAF 2002. Proceedings of the 13th IEEE International Symposium on

ISSN

1099-4734

Print_ISBN

0-7803-7414-2

Type

conf

DOI

10.1109/ISAF.2002.1195923

Filename

1195923