Title :
Anomalous short-channel effects in 0.1 /spl mu/m MOSFETs
Author :
Crabbi, E. ; Logan, R. ; Snare, J. ; Agnello, P. ; Sun, J.
Author_Institution :
Semicond. Res. & Dev. Center, IBM Corp., Hopewell Junction, NY, USA
Abstract :
A systematic study of the impact of junction dose on N- and P-channel MOSFETs with 0.10 /spl mu/m effective channel lengths operating at 1.8V is reported. A non-monotonic dependence of saturated V/sub t/ roll-off on junction dose is observed with a minimum occurring for junction doses in the mid-10/sup 14/ cm/sup -2/ range. The degradation occurring at lower doses is caused by the lateral grading of the junctions as determined by the bias dependence of the overlap capacitance while that at higher doses is caused by deeper junctions.
Keywords :
MOSFET; capacitance; doping profiles; ion implantation; semiconductor device models; 0.1 micron; 1.8 V; NMOSFET; PMOSFET; anomalous short-channel effects; bias dependence; effective channel lengths; junction dose; lateral grading; n-channel MOSFETs; overlap capacitance; p-channel MOSFETs; saturated threshold voltage rolloff; Annealing; Capacitance; Design optimization; FETs; Fabrication; Implants; Lithography; MOSFETs; Radiofrequency identification; Sun;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.554048
