• DocumentCode
    3412774
  • Title

    Batteryless MEMS flow sensor within prosthetic vascular graft

  • Author

    Cairan He ; Li-Shiah Lim ; Hamidullah, M. ; Singh, Prashant ; Woo-Tae Park ; Han-Hua Feng

  • Author_Institution
    Miniaturized Med. Devices Program, A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
  • fYear
    2011
  • fDate
    3-5 Aug. 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper reviews our group´s work on implantable MEMS flow sensor for detecting prosthetic vascular graft failure. The core sensing mechanism is by measuring the resistance change of a piezoresistor attached to the moving part of the flow sensor. Variations of blood flow rate causes pressure or flow change, which deflects the moving part, such as a cantilever beam or diaphragm, of the flow sensor. The mechanical deformation further causes stress change on the piezoresistor whose resistance value varies with its internal stress. By accurate measuring the resistance change on the piezoresistor one can deduce the blood flow variation. Two types of piezoresistor are studied: silicon nanowire (SiNW) and gate-all-around (GAA) nanowire FET. Two types of sensor architecture are discussed: cantilever beam and diaphragm membrane. Different materials (SiO2, Si3N4, parylene) are tested for making diaphragm to achieve minimal residue stress and ensure good biocompatibility.
  • Keywords
    bioMEMS; blood flow measurement; cantilevers; diaphragms; electric resistance measurement; elemental semiconductors; flow sensors; insulated gate field effect transistors; internal stresses; microsensors; nanowires; piezoresistive devices; prosthetics; resistors; silicon; Si; batteryless implantable MEMS flow sensor; biocompatibility; blood flow rate; cantilever beam; core sensing mechanism; diaphragm membrane; gate-all-around nanowire FET; internal stress; mechanical deformation; parylene; piezoresistor; prosthetic vascular graft; residue stress; resistance value; silicon nanowire; Application specific integrated circuits; Blood flow; FETs; Prosthetics; Sensitivity; Silicon; Structural beams; batteryless; flow sensor; minimally invasive surgery; pressure sensor; prosthetic vascular graft;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Defense Science Research Conference and Expo (DSR), 2011
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4244-9276-3
  • Type

    conf

  • DOI
    10.1109/DSR.2011.6026866
  • Filename
    6026866