DocumentCode
3413102
Title
Potassium niobate single-domain crystals as piezoelectrics with low dielectric constants and high electromechanical coupling properties
Author
Wada, S. ; Muraoka, K. ; Kakemoto, H. ; Kumagai, H. ; Tsurumi, T.
Author_Institution
Graduate Sch. of Sci. & Eng., Tokyo Inst. of Technol., Japan
fYear
2002
fDate
28 May-1 June 2002
Firstpage
395
Lastpage
398
Abstract
Piezoelectric properties of potassium niobate (KNbO3) crystals with the single-domain state were investigated. KNbO3 crystals were cut, polished and sized into various shapes. The mechanical processing induced mechanical damage into the crystals. Remove of the stressed surface layers was very effective to achieve high mechanical quality factor (Qm). After this treatment, KNbO3 crystals were poled by the 2-step poling method. As a result, the domain state was almost single-domain. Using poled KNbO3 single-domain crystals, the piezoelectric properties with k32 modes were measured using a conventional resonance method. As a result, the [001]o poled KNbO3 crystals exhibited the electromechanical coupling factor (k32) of almost 40%, the piezoelectric constant (d32) of almost 18.5 pC/N, the dielectric constant (ε33) of almost 48 and Qm over 7,600. Thus, the KNbO3 crystals are piezoelectrics with low dielectric constants and high electromechanical coupling properties, i.e., KNbO3 crystal is a promising material for sensor application.
Keywords
dielectric polarisation; electric domains; electric sensing devices; permittivity; piezoelectric devices; piezoelectric materials; potassium compounds; 2-step poling method; KNbO3; dielectric constant; domain state; high electromechanical coupling properties; high mechanical quality factor; low dielectric constants; mechanical processing induced mechanical damage; piezoelectric constant; piezoelectrics; single-domain crystals; stressed surface layers; Crystalline materials; Crystals; Dielectric constant; Dielectric materials; High-K gate dielectrics; Niobium compounds; Q factor; Resonance; Shape; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2002. ISAF 2002. Proceedings of the 13th IEEE International Symposium on
ISSN
1099-4734
Print_ISBN
0-7803-7414-2
Type
conf
DOI
10.1109/ISAF.2002.1195951
Filename
1195951
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