DocumentCode
3413244
Title
A 3b 40GS/s ADC-DAC in 0.12μm SiGe
Author
Cheng, William ; Ali, Wesam ; Liu, Kun ; Linder, L. ; Stevens, R.
Author_Institution
TelASIC Commun., Inc., El Segundo, CA, USA
fYear
2004
fDate
15-19 Feb. 2004
Firstpage
262
Abstract
A 3b SiGe ADC-DAC produces a conversion rate of 40GS/s with >200 dynamic range over 12GHz bandwidth for receiver exciter applications. The 40GHz design and test methodology, as well as a new wideband quantizer front end, are described.
Keywords
Ge-Si alloys; bipolar integrated circuits; digital-analogue conversion; high-speed integrated circuits; quantisation (signal); 12 GHz; 40 GHz; ADC-DAC; HBT process; SiGe; current switch element; design and test methodology; on-chip ring oscillator clock source; quantization threshold levels; receiver exciter; signal clocking; wideband quantizer frontend; Bandwidth; CMOS technology; Clocks; Germanium silicon alloys; Integrated circuit interconnections; RLC circuits; Resistors; Silicon germanium; Space technology; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International
ISSN
0193-6530
Print_ISBN
0-7803-8267-6
Type
conf
DOI
10.1109/ISSCC.2004.1332694
Filename
1332694
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