Title :
A 3b 40GS/s ADC-DAC in 0.12μm SiGe
Author :
Cheng, William ; Ali, Wesam ; Liu, Kun ; Linder, L. ; Stevens, R.
Author_Institution :
TelASIC Commun., Inc., El Segundo, CA, USA
Abstract :
A 3b SiGe ADC-DAC produces a conversion rate of 40GS/s with >200 dynamic range over 12GHz bandwidth for receiver exciter applications. The 40GHz design and test methodology, as well as a new wideband quantizer front end, are described.
Keywords :
Ge-Si alloys; bipolar integrated circuits; digital-analogue conversion; high-speed integrated circuits; quantisation (signal); 12 GHz; 40 GHz; ADC-DAC; HBT process; SiGe; current switch element; design and test methodology; on-chip ring oscillator clock source; quantization threshold levels; receiver exciter; signal clocking; wideband quantizer frontend; Bandwidth; CMOS technology; Clocks; Germanium silicon alloys; Integrated circuit interconnections; RLC circuits; Resistors; Silicon germanium; Space technology; Switches;
Conference_Titel :
Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International
Print_ISBN :
0-7803-8267-6
DOI :
10.1109/ISSCC.2004.1332694
