Title :
The electronic behaviour of Si3N4-GaAs interfaces
Author :
Swanson, J.G. ; Wang, Q.H. ; Bowser, M.I.
Author_Institution :
Dept. of Electron. & Electr. Eng., King´´s Coll., London, UK
Abstract :
The static and dynamic behaviours of Si3N4-GaAs interfaces are described. The possible effects of the passivated surface on device behaviour are considered with relation to devices of current interest
Keywords :
III-V semiconductors; gallium arsenide; interface states; passivation; semiconductor-insulator boundaries; silicon compounds; Si3N4-GaAs; Si3N4-GaAs interfaces; devices; dynamic behaviour; electronic behaviour; passivated surfaces; static behaviour; Current density; Electron emission; Filling; Gallium arsenide; Heterojunction bipolar transistors; Hydrogen; Interface states; Semiconductor device doping; Silicon; Tunneling;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-2537-0
DOI :
10.1109/EDMO.1995.493685
