Title :
General results of investigation of the excess noise in optoelectronic devices and their application for improving the device performance
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
Abstract :
The properties of the excess noise observed in a wide variety of optoelectronic devices based on homo- and heterojunctions in III-V and II-VI compounds are considered. It is shown that rather universal mechanism is responsible for this noise and its model is described. A number of technical applications of the results of measurements of this noise is presented and discussed
Keywords :
II-VI semiconductors; III-V semiconductors; optical noise; optoelectronic devices; semiconductor device models; semiconductor device noise; II-VI compounds; III-V compounds; excess noise; heterojunctions; homojunctions; model; optoelectronic devices; Acoustical engineering; Heterojunctions; Light emitting diodes; Mechanical factors; Noise generators; Noise measurement; Optoelectronic devices; P-n junctions; Semiconductor device noise; Tunneling;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-2537-0
DOI :
10.1109/EDMO.1995.493690
