Title :
New technique for increasing speed of semiconductor lasers
Author :
Haldar, M.K. ; Mendis, F.V.C. ; Wang, J.
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
The ultimate limit of direct modulation bandwidth of a semiconductor laser diode is the intrinsic bandwidth determined by rate equations. In this paper we show that the intrinsic bandwidth can be significantly increased through the use of injection-locking. Our analysis shows that for moderate and high injection levels, the bandwidth of a laser diode can be increased to several times the bandwidth of a free running laser diode operating at the same bias current. The required injection power depends on laser parameters but is less than the power of the free running laser. However, the injected photon number and detuning must lie within the range of values required for the dynamic injection-locked state
Keywords :
high-speed optical techniques; laser mode locking; laser theory; semiconductor lasers; detuning; direct modulation bandwidth; dynamic injection-locked state; high injection levels; injected photon number; injection power; injection-locking; intrinsic bandwidth; laser diode bandwidth; moderate injection levels; rate equations; semiconductor lasers; speed increase technique; Bandwidth; Diode lasers; Electrooptic modulators; Equations; Frequency; Laser modes; Laser theory; Optical modulation; Power lasers; Semiconductor lasers;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-2537-0
DOI :
10.1109/EDMO.1995.493692
