Design of antireflection coatings for triple heterojunction AlGaAs-GaAs space solar cells

Author

Al-Bustani, A. ; Feteha, M.Y.

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. of Central Lancashire, Preston, UK

fYear

1995

fDate

35004

Firstpage

55

Lastpage

60

Abstract

A major task in future developments of GaAs space solar cells is to increase the power to area ratio. In this work, high performance in a new triple heterojunction AlGaAs-GaAs space solar cell is obtained by applying antireflection coating with optimum thicknesses. The effects of single and double antireflection coatings on the output characteristics are presented. The reflection from the multiple interfaces through the cell itself is taken into consideration in the optimisation calculations. The use of MgF₂/ZnS as a double antireflection coating for the cell gives an efficiency of 22.101% at AM0

Keywords

III-V semiconductors; aluminium compounds; antireflection coatings; gallium arsenide; photovoltaic power systems; semiconductor device models; short-circuit currents; solar cells; space vehicle power plants; 22.101 percent; AM0 efficiency; AlGaAs-GaAs; MgF₂-ZnS; MgF₂/ZnS; antireflection coatings; double antireflection coatings; fill factor; model; multiple interface reflection; open circuit voltage; optimisation calculations; optimum thickness; output characteristics; power to area ratio; short circuit current density; triple heterojunction AlGaAs-GaAs space solar cells; Coatings; Equations; Extinction coefficients; Gallium arsenide; Heterojunctions; Optical reflection; Optical refraction; Photovoltaic cells; Refractive index; Stability;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on

Conference_Location

London

Print_ISBN

0-7803-2537-0

Type

conf

DOI

10.1109/EDMO.1995.493694

Filename

493694