Characterisation of transparent ITO emitter contact InP/InGaAs heterojunction phototransistors

Author

Bashar, S.A. ; Rezazadeh, A.A.

Author_Institution

Dept. of Electron. & Electr. Eng., King´´s Coll., London, UK

fYear

1995

fDate

35004

Firstpage

76

Lastpage

81

Abstract

The electrical, optical and spectral responses of optically transparent emitter InP/InGaAs heterojunction phototransistors (HPTs) fabricated using Indium Tin Oxide (ITO) are presented. These HPTs showed significantly increased optical responsivities while: the electrical characteristics were similar to their respective opaque counterparts. Responsivities of 28 A/W at 1310 nm for the InP/InGaAs HPTs were obtained. The spectral responses of these phototransistors were simulated and compared with the measured results and good correlation between the experiments and the theoretical models were obtained

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; infrared spectra; phototransistors; semiconductor device models; 1310 nm; HPT; ITO; InP-InGaAs; InP/InGaAs heterojunction phototransistors; InSnO; electrical characteristics; optical gain; optical responsivities; simulation; spectral response; theoretical models; transparent ITO emitter contact; Absorption; Heterojunctions; Indium gallium arsenide; Indium phosphide; Indium tin oxide; Optical devices; Optical refraction; Optical variables control; Phototransistors; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on

Conference_Location

London

Print_ISBN

0-7803-2537-0

Type

conf

DOI

10.1109/EDMO.1995.493698

Filename

493698