Low turn-on voltage AlGaInP LEDs using thermally evaporated transparent conducting Indium-Tin-Oxide (ITO)

Author

Aliyu ; Morgan ; Thomas, H. ; Bland

Author_Institution

Div. of Electron., Univ. of Wales, Cardiff, UK

fYear

1995

fDate

35004

Firstpage

82

Lastpage

87

Abstract

Low turn-on voltage AlGaInP/GaInP surface emitting LEDs have been achieved using a thermally evaporated transparent conducting Indium Tin Oxide (ITO) layer. The devices have lower forward series resistance (1-3) ohms compared to standard Au/Zn devices which have a series resistance greater than 5 ohms. The ITO/AlGaInP LEDs emit orange light, with a peak wavelength of 600 nm and full width at half maximum (FWHM) of 15 nm. A forward voltage of typically 1.70 V at 20 mA was obtained. Variations in the thicknesses of the cladding and GaAs cap layer thicknesses did not cause any significant change in the device turn-on voltages. Evidence of reduced junction heating has been observed

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; optical windows; tin compounds; vacuum deposited coatings; 1 to 3 ohm; 1.7 V; 600 nm; AlGaInP LEDs; AlGaInP/GaInP surface emitting LEDs; FWHM; GaAs cap layer thickness variation; ITO-GaAs-GaInP-AlGaInP; InSnO-GaAs-GaInP-AlGaInP; cladding thickness variation; forward series resistance; low turn-on voltage; orange light emission; peak wavelength; reduced junction heating; thermally evaporated transparent conducting ITO; window material; Conducting materials; Contacts; Gallium arsenide; Indium tin oxide; Inorganic materials; Light emitting diodes; Low voltage; Optical materials; Photonic band gap; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on

Conference_Location

London

Print_ISBN

0-7803-2537-0

Type

conf

DOI

10.1109/EDMO.1995.493699

Filename

493699