DocumentCode
3414130
Title
The effect of statistical dopant fluctuations on MOS device performance
Author
Stolk, P.A. ; Klaassen, D.B.M.
Author_Institution
Philips Res. Lab., Eindhoven, Netherlands
fYear
1996
fDate
8-11 Dec. 1996
Firstpage
627
Lastpage
630
Abstract
The device simulator MINIMOS has been used to quantify the influence of intrinsic dopant fluctuations on the spreading and correlations of a large set of transistor and compact model parameters. It is demonstrated that the contribution of dopant fluctuations to MOS transistor matching can be drastically reduced by novel device designs using ground-plane channel profiles.
Keywords
MOSFET; doping profiles; semiconductor device models; semiconductor doping; MINIMOS device simulator; MOS transistor matching; compact model parameters; ground-plane channel profile; statistical dopant fluctuations; Analytical models; Atomic layer deposition; Doping; Fluctuations; Laboratories; MOS devices; MOSFETs; Semiconductor process modeling; Solid modeling; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-3393-4
Type
conf
DOI
10.1109/IEDM.1996.554061
Filename
554061
Link To Document