Title :
Nonlinear common source MESFET behaviour and model validation
Author :
Passiopoulos, G. ; Webster, D.R. ; Parker, A.E. ; Haigh, D.G.
Author_Institution :
Dept. of Electron. & Electr. Eng., King´´s Coll., London, UK
Abstract :
In this paper we investigate the effect of bias conditions and load resistance on the nonlinear behaviour of a MESFET Common Source (CS) amplifier at medium frequencies. The distortion nulling effects observed in measured results provide a good criteria for assessing large signal model performance over a wide range of bias conditions. The Parker-Skellern model of the MESFET is used to simulate the MESFET circuit configuration for which the distortion measurements were performed. The model predicts the observed distortion structure
Keywords :
MESFET circuits; Schottky gate field effect transistors; Volterra series; equivalent circuits; harmonic distortion; intermodulation distortion; nonlinear network analysis; radiofrequency amplifiers; semiconductor device models; MESFET behaviour; Parker-Skellern model; bias conditions; common source amplifier; distortion nulling effects; large signal model performance; load resistance; model validation; nonlinear behaviour; nonlinear common source MESFET; Circuit simulation; Dispersion; Distortion measurement; Educational institutions; FETs; Frequency; Impedance; MESFET circuits; Nonlinear distortion; Voltage control;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-2537-0
DOI :
10.1109/EDMO.1995.493706
