Title :
On temperature and hot electron induced degradation in AlGaAs/InGaAs PM-HEMT´s
Author :
Meneghesso, Gaudenzio ; de Bortoli, Eliane ; Cova, Paolo ; Menozzi, R.
Author_Institution :
Dipartimento di Elettronica e Inf., Padova Univ., Italy
Abstract :
AlGaAs/InGaAs pseudomorphic HEMTs (PM-HEMTs) have been submitted to either hot electron or high temperature storage stress tests, A non-permanent increase of the drain current is observed after the tests and is correlated with the presence of deep levels in the devices, Trapping of holes generated by impact ionization (during the hot electron stress) or thermally activated electron detrapping (during the high temperature storage) are responsible for the observed shifts of the PM-HEMT´s characteristics. We also present a new DC based investigation technique that gives information about the localization of the trapped/detrapped charge
Keywords :
III-V semiconductors; aluminium compounds; deep levels; electron traps; gallium arsenide; high electron mobility transistors; hole traps; hot carriers; impact ionisation; indium compounds; life testing; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device reliability; semiconductor device testing; AlGaAs-InGaAs; DC based investigation technique; PM-HEMT; deep levels; drain current; high temperature storage stress; hole trapping; hot electron induced degradation; impact ionization; pseudomorphic HEMT; thermally activated electron detrapping; trapped/detrapped charge localization; Character generation; Charge carrier processes; Degradation; Electron traps; Impact ionization; Indium gallium arsenide; PHEMTs; Temperature; Testing; Thermal stresses;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-2537-0
DOI :
10.1109/EDMO.1995.493709
