Title :
A 17.1 to 17.3 GHz image-reject down-converter with phase-tunable LO using 3× subharmonic injection locking
Author :
Ma, Dongsheng ; Long, Jiang ; Jagannathan, B. ; Harame, D.L.
Abstract :
A 17 GHz RF receiver consisting of an LNA and doubly-balanced mixers coupled by a monolithic 3.7:1 step-down transformer realizes over 70 dB of image-rejection in a 100 GHz-fT SiGe BiCMOS technology. Quadrature LO signals are generated with electronically tunable phase from a subharmonically injection-locked oscillator. The measured IIP3 is -5.1 dBm with 17.3 dB conversion gain and 6.5 dB NF (SSB, 50 Ω) at 17.2 GHz. The 1.9×1.0 mm2 IC consumes 62.5 mW from a 2.2 V supply.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC amplifiers; MMIC frequency convertors; MMIC mixers; circuit tuning; injection locked oscillators; integrated circuit noise; low-power electronics; radio receivers; semiconductor materials; 1.0 mm; 1.9 mm; 100 GHz; 17.1 to 17.3 GHz; 17.3 dB; 2.2 V; 50 ohm; 6.5 dB; 62.5 mW; IIP3; LNA; NF; RF receiver; SiGe; SiGe BiCMOS technology; WLAN; conversion gain; doubly-balanced mixers; electronically tunable phase; image-reject down-converter; image-rejection; monolithic step-down transformer; phase-tunable LO; quadrature LO signals; subharmonic injection locking; subharmonically injection-locked oscillator; Amplitude modulation; BiCMOS integrated circuits; Gain measurement; Germanium silicon alloys; Image converters; Injection-locked oscillators; Noise measurement; Radio frequency; Signal generators; Silicon germanium;
Conference_Titel :
Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International
Print_ISBN :
0-7803-8267-6
DOI :
10.1109/ISSCC.2004.1332757
