GaAs and InP-based dual-gate HEMTs for high-gain MMIC amplifiers

Author

Baeyens, Y. ; Schreurs, D. ; Nauwelaers, B. ; van der Zanden, K. ; Van Hove, M. ; De Raedt, W. ; Van Rossum, M.

Author_Institution

Div. ESAT-TELEMIC, Katholieke Univ., Leuven, Belgium

fYear

1995

fDate

35004

Firstpage

161

Lastpage

166

Abstract

This work compares the high-frequency performance of both single and dual-gate GaAs PM and InP LM HEMTs with a gatelength of 0.15 μm. Dual-gate cascode HEMTs realised in both technologies show state-of-the-art microwave gain at 10 GHz: 24.2 dB and 27 dB for GaAs PHEMT and InP LM HEMTs respectively. Using dual-gate HEMTs, different coplanar MMIC circuits were designed and successfully realised. Two examples are presented: a GaAs PHEMT distributed amplifier with a gain-bandwidth product of 185 GHz and a small-band one-stage reactively matched amplifier having a gain of more than 20 dB at 23 GHz for both the GaAs and InP-based realisation

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; coplanar waveguides; distributed amplifiers; field effect MMIC; gallium arsenide; indium compounds; 0.15 micron; 10 GHz; 24.2 dB; 27 dB; GaAs; InP; LM HEMTs; PHEMT; cascode HEMTs; coplanar MMIC circuits; distributed amplifier; dual-gate HEMTs; gain-bandwidth product; gatelength; high-gain MMIC amplifiers; lattice matched transistors; microwave gain; one-stage reactively matched amplifier; Circuits; FETs; Frequency; Gallium arsenide; HEMTs; Indium phosphide; MMICs; MODFETs; PHEMTs; Parasitic capacitance;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1995. EDMO., IEEE 1995 Workshop on

Conference_Location

London

Print_ISBN

0-7803-2537-0

Type

conf

DOI

10.1109/EDMO.1995.493713

Filename

493713