Title :
A novel RTD-HEMT-RTD structure based on simulations
Author :
Zhang, Bin ; Chen, Kevin J. ; Gang, Ruan ; Chen, Richard M M
Author_Institution :
Dept. of Electr. Eng., Fudan Univ., Shanghai, China
Abstract :
DC characteristics of resonant tunneling diodes (RTDs) and resonant tunneling high electron mobility transistors (RTHEMTs) are simulated utilizing a new methodology of parameter extraction for RTD. Good agreement between simulation results and measurements is achieved. Based on the simulations, a RTD-HEMT-RTD structure is proposed. It exhibits novel characteristics suitable for many kinds of applications, including early vision and multi-state memories
Keywords :
HEMT integrated circuits; circuit simulation; digital circuits; network parameters; resonant tunnelling diodes; DC characteristics; RTD-HEMT-RTD structure; early vision; multi-state memories; parameter extraction; resonant tunneling diodes; resonant tunneling high electron mobility transistors; simulation results; Circuit simulation; Curve fitting; Data mining; Diodes; Equations; HEMTs; MODFETs; Parameter extraction; Resonant tunneling devices; Voltage;
Conference_Titel :
Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-5471-0
DOI :
10.1109/ISCAS.1999.777832
