DocumentCode :
3414766
Title :
60GHz transceiver circuits in SiGe bipolar technology
Author :
Reynolds, S. ; Floyd, Brian ; Pfeiffer, U. ; Zwick, T.
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
fYear :
2004
fDate :
15-19 Feb. 2004
Firstpage :
442
Abstract :
A 60GHz LNA, direct-downconverter, PA, and 20GHz VCO are built in a 200GHz ft,/fmax, 0.12μm SiGe technology. The 10.8mW LNA has 15dB gain, 3.4-4.4dB noise figure and -8.5dBm IIP3. The down converter has 16dB gain, >50dB LO-RF isolation, and 13.4-14.8dB noise figure. The PA delivers 10dBm at 9dB gain.
Keywords :
Ge-Si alloys; S-parameters; bipolar MIMIC; bipolar analogue integrated circuits; millimetre wave frequency convertors; millimetre wave oscillators; millimetre wave power amplifiers; transceivers; voltage-controlled oscillators; 60 GHz; 9 dB; LNA; S-parameters; SiGe; VCO; bipolar technology; cascoded differential pair; direct-downconverter; front-end transceiver; power amplifier; transceiver circuits; wireless personal-area network; Baseband; Circuits; Coplanar waveguides; Frequency; Germanium silicon alloys; Impedance matching; Inductors; Noise measurement; Silicon germanium; Transceivers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International
ISSN :
0193-6530
Print_ISBN :
0-7803-8267-6
Type :
conf
DOI :
10.1109/ISSCC.2004.1332784
Filename :
1332784
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3414766
بازگشت