DocumentCode
3414820
Title
64 GHz and 100 GHz VCOs in 90 nm CMOS using optimum pumping method
Author
Franca-Neto, L.M. ; Bishop, Ralph ; Bloechel, B.A.
Author_Institution
Intel R&D Labs, Hillsboro, OR, USA
fYear
2004
fDate
15-19 Feb. 2004
Firstpage
444
Abstract
A method to optimally pump energy from the transistors to the passive network is presented for the design of integrated 64 GHz and 100 GHz VCOs in 90 nm CMOS. The VCOs use an on-die distributed network, draw ∼25 mA from a 1 V supply and produce oscillations with 0.4 Vp-p amplitudes. Phase noise is <-110 dBc/Hz at 10 MHz offset, and VCO gain is 2 GHz/V.
Keywords
CMOS integrated circuits; field effect MIMIC; integrated circuit design; integrated circuit measurement; integrated circuit noise; millimetre wave oscillators; nanoelectronics; passive networks; phase noise; voltage-controlled oscillators; 0.4 V; 1 V; 100 GHz; 25 mA; 64 GHz; 90 nm; CMOS VCO; VCO gain; integrated VCO design; on-die distributed network; optimal energy pump method; optimum pumping method; oscillations; passive network; phase noise; CMOS logic circuits; CMOS technology; Frequency; Impedance; Microwave transistors; Mixers; Passive networks; Stability; Transmission lines; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International
ISSN
0193-6530
Print_ISBN
0-7803-8267-6
Type
conf
DOI
10.1109/ISSCC.2004.1332785
Filename
1332785
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