Title :
A novel technique to reduce crosstalk in monolithically integrated high speed photoreceiver arrays
Author :
Syao, K.C. ; Gutierrez-Aitken, A.L. ; Yang, K. ; Zhang, X. ; Haddad ; Bhattacharya, P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
InP-based monolithically integrated p-i-n/HBT photoreceiver 8- and 16-element arrays with a novel on-chip shielding, to reduce electrical and optical crosstalk, have been fabricated and characterized. The maximum measured bandwidth per channel is 11.5 GHz. A measured adjacent channel crosstalk of -25 dB improves to -40 dB with the shielding at a frequency of 5 GHz and with a dual biasing scheme.
Keywords :
arrays; crosstalk; electromagnetic shielding; high-speed optical techniques; integrated optoelectronics; optical crosstalk; optical receivers; 11.5 GHz; 5 GHz; InP; adjacent channel crosstalk; bandwidth; dual biasing; electrical crosstalk; monolithically integrated high speed device; on-chip shielding; optical crosstalk; p-i-n/HBT photoreceiver array; Bandwidth; Circuits; Heterojunction bipolar transistors; High speed optical techniques; Indium gallium arsenide; Microstrip; Optical arrays; Optical crosstalk; Optical feedback; Optical sensors;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.554065
