Title :
Monolithic integrated MSM-2DEG PD/HEMT photoreceiver based on an identical InP/InGaAs heterostructure
Author :
Horstmann, M. ; Marso, H. ; Schimp, K. ; Kordos, P.
Author_Institution :
Inst. of Thin Films & Ion Technol., Res. Centre Julich, Germany
Abstract :
A monolithic integrated photoreceiver for long-haul high-speed optoelectronic transmission systems is presented. The photoreceiver consists of a MSM photodetector and a HEMT amplifier, prepared on an identical InGaAs/InP 2DEG layer structure. The design considerations, preparation procedure and optoelectronic properties of discrete devices as well as results on receiver circuits are presented. The MSM-2DEG photodetector exhibits a 0.21A/W responsivity and a 16GHz bandwidth. The HEMT amplifiers have 45/85GHz f/sub T//f/sub max/. A 7GHz bandwidth and 100V/W responsivity is measured on an inductive tuned front-end receiver.
Keywords :
high electron mobility transistors; integrated optoelectronics; optical receivers; photodetectors; 16 GHz; 7 GHz; HEMT amplifier; InP-InGaAs; InP/InGaAs heterostructure; MSM photodetector; MSM-2DEG PD/HEMT photoreceiver; inductive tuned front-end receiver; long-haul high-speed optoelectronic transmission; monolithic integration; Absorption; Gold; HEMTs; Indium gallium arsenide; Indium phosphide; Insulation; Integrated circuit measurements; Optical beams; Optical sensors; Photodetectors;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.554066
