Title :
Optoelectronic integrated receiver for inter-MCM and inter-chip optical interconnects
Author :
Heremans, P. ; Ayadi, K. ; Kuijk, M. ; Bickel, G. ; Vounckx, R. ; Borghs, G.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
We present the integration of an ultra-sensitive III-V detector for digital optical signals with a novel comparator amplifier silicon circuit. The III-V detector is based on a differential pair of optical thyristors. It has at present a total area of 160/spl times/200 /spl mu/m/sup 2/, it operates at up to 155 Mbit/s and it requires optical inputs of 3 femtojoule at 830 nm. Its combination with the proposed silicon amplifier circuit results in a unique optoelectronic receiver ideally suited for inter-chip interconnects: it is extremely sensitive to input light, which allows to use less efficient yet reliable and cost-effective light sources (possibly LEDs); its speed is comparable to on-chip clock speed, appealing for inter-chip and inter-MCM interconnects; its low power dissipation and small size are features which permit massively parallel integration of the OEIR to achieve a huge aggregate bandwidth.
Keywords :
integrated optoelectronics; multichip modules; optical interconnections; optical receivers; photothyristors; 155 Mbit/s; 3 fJ; 830 nm; III-V detector; comparator amplifier silicon circuit; differential pair; digital optical signal; inter-MCM interconnect; inter-chip interconnect; optical interconnect; optical thyristor; optoelectronic integrated receiver; III-V semiconductor materials; Integrated circuit interconnections; Optical amplifiers; Optical detectors; Optical interconnections; Optical receivers; Optical sensors; Silicon; Stimulated emission; Ultrafast optics;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.554067