Energy-band engineering and characterization improvements by fluorine incorporation on Gd2O3 nanocrystal memory

As a potential candidate for future nonvolatile memory (NVM) application, the discrete charge storage nodes formed as the nanocrystal (NC) structure has been caught much attention. Among the NC materials, high-k metal oxide is the unique one due to the mixed chemical reactions during high temperature forming process. The over-view of gadolinium oxide nanocrystal (Gd₂O₃-NC) memory is revealed in this paper. Gd₂O₃-NC was formed by one step rapid thermal annealing treated on the amorphous Gd₂O₃ film prepared by sputter system. The optical tests were conducted to exam the bandgap value of the Gd₂O₃-NC and the x-ray tests were conducted to exam the valence band offset. The charge trapping phenomenon can be characterized by the retention tests for various temperatures. Forming gas annealing was treated on the Gd₂O₃-NC to passivate the deep traps. A band engineered method by CF₄ plasma treatment was also conducted to improve the memory characteristics.