Effects of surface traps on the breakdown voltage of passivated AlGaN/GaN HEMTs under high-field stress

Author

Zi-Qi Zhao ; De-Wei Liao ; Jiang-Feng Du

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

3

Abstract

In this paper, the effects of surface traps on the breakdown voltage (V_br) of passivated AlGaN/GaN high electron mobility transistors (HEMTs) are investigated by using DC stress measurements under the temperature range from 25°C to 200°C. The V_br shows a monotonically increase with temperature, stress time and stress voltage. The charging time of the surface traps ~300s is obtained for the devices with 400 nm-thick SiN passivation. Moreover, a critical electric field for the charging of surface trap is obtained, and the value is ~0.12MV/cm at room temperature and ~0.09MV/cm at 200°C. The results show that the surface passivation does not eliminate the effects of the surface traps, but just turn them into long-term effects.

Keywords

III-V semiconductors; aluminium compounds; electric breakdown; electron traps; gallium compounds; high electron mobility transistors; hole traps; passivation; wide band gap semiconductors; AlGaN-GaN; SiN; breakdown voltage; high electron mobility transistor; high-field stress; long term effect; passivated HEMT; size 400 nm; stress time; stress voltage; surface traps; temperature 25 C to 200 C; Aluminum gallium nitride; Electron traps; Gallium nitride; HEMTs; MODFETs; Stress; Surface charging;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467595

Filename

6467595