Fabrication characteristics of 1.2kV SiC junction barrier schottky rectifiers with etched implant junction termination extension

An etched implanted junction termination extension (JTE) is presented for high-voltage 4H-SiC JBS rectifiers. Unlike the conventional JTE structure, the proposed structure utilizes multiple etching steps to achieve the optimum JTE concentration range. Experimental and simulation results show that the JBS rectifier with etched JTE can improve the blocking performance compared to a conventional JTE structure and decrease the sensitivity of any possible variation in processing condition. The fabricated SiC JBS rectifier showed the forward on-state voltage characteristic is 1.3V at room temperature and the blocking voltage of 1.2kV.