DocumentCode
3415653
Title
Ir-electroded BST thin film capacitors for 1 giga-bit DRAM application
Author
Tung-Sheng Chen ; Hadad, D. ; Balu, V. ; Jiang, B. ; Shao-Hong Kuah ; McIntyre, P.C. ; Summerfelt, S.R. ; Anthony, J.M. ; Lee, J.C.
Author_Institution
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fYear
1996
fDate
8-11 Dec. 1996
Firstpage
679
Lastpage
682
Abstract
(Ba,Sr)TiO/sub 3/ (BST) thin film capacitors using iridium (Ir) as an electrode material are investigated for high density (1 Gbit-scale and beyond) dynamic random access memories (DRAMs). Excellent electrical characteristics (e.g. high polarization and low leakage) of BST capacitors with Ir top electrodes were obtained. The excellent resistance of these capacitors to hydrogen damage during forming gas anneals is also reported.
Keywords
DRAM chips; annealing; barium compounds; iridium; strontium compounds; thin film capacitors; (BaSr)TiO/sub 3/; 1 Gbit; BST thin film capacitor; DRAM; Ir; Ir electrode; electrical characteristics; forming gas anneal; hydrogen damage; leakage; polarization; Binary search trees; Capacitors; DRAM chips; Electric resistance; Electric variables; Electrodes; Hydrogen; Polarization; Random access memory; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-3393-4
Type
conf
DOI
10.1109/IEDM.1996.554072
Filename
554072
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