DocumentCode
3415889
Title
New routes for advanced 3D Heterogeneous Integration on silicon
Author
Deleonibus, Simon
Author_Institution
CEA-LETI, Grenoble, France
fYear
2012
fDate
Oct. 29 2012-Nov. 1 2012
Firstpage
1
Lastpage
4
Abstract
Nanoelectronics will have to face major challenges in the next decades in order to proceed with increasing progress and reduced variability. New progress laws combined to the scaling down of CMOS based technology will emerge to enable new paths to Functional Diversification. New materials and disruptive architectures, Heterogeneous Integration, introducing 3D schemes at the Front End and Back End levels, will be introduced to make it possible.
Keywords
CMOS integrated circuits; nanoelectronics; silicon; CMOS based technology; Si; advanced 3D heterogeneous integration; back end level; disruptive architectures; front end level; functional diversification; heterogeneous integration; nanoelectronics; CMOS integrated circuits; Logic gates; MOSFETs; Nanowires; Silicon; Silicon compounds; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location
Xi´an
Print_ISBN
978-1-4673-2474-8
Type
conf
DOI
10.1109/ICSICT.2012.6467621
Filename
6467621
Link To Document