Recent development of growth and characterization of InN, in-rich InGaN and those nano-structures

New RF-MBE growth method called DERI (Droplet Elimination by Radical Beam Irradiation) was proposed as a reproducible growth method of high quality and smooth InN films. Growth process was investigated based on in situ monitoring by RHEED and laser beam reflection. It was suggested that growth proceeds keeping two mono-layers of In and additional In droplets on the growing surface. Growth of InGaN alloy was also investigated, which showed strong segregation of Ga and In from In/Ga wetting layers. Using this phenomenon, high quality InN/InGaN, InGaN/InGaN MQWs were successfully fabricated. Possible new approach to passivate dislocation effect is proposed, which may give break through to obtain thick InGaN used for high efficiency solar cells.