Title :
A transistor measurement setup for microwave high power amplifiers design
Author :
Teyssier, Jean-Pierre ; Barataud, Denis ; Charbonniaud, Christophe ; De Groote, Fabien ; Verspecht, Jan ; Nébus, Jean-Michel ; Quéré, Raymond
Author_Institution :
IRCOM, Limoges Univ., France
Abstract :
This paper presents our view of a powerful and versatile measurement setup dedicated to nonlinear characterization and modeling of high power transistor. Our bench with on-wafer capabilities captures time domain waveforms under passive load-pull and source-pull conditions. Moreover, harmonic load-pull and pulsed mode of I(V) and/or RF operation are available. Due to the combination of several innovative features, high power measurements up to 18 GHz and 50 Watts with a gamma load factor up to 0.85 at the probe tips are made possible.
Keywords :
microwave power amplifiers; microwave power transistors; semiconductor device measurement; RF operation; gamma load factor; harmonic load-pull; high power transistor; microwave high power amplifiers design; on-wafer capabilities; passive load-pull conditions; pulsed mode; source-pull conditions; time domain waveforms; transistor measurement setup; High power amplifiers; Microwave measurements; Microwave transistors; Power amplifiers; Power measurement; Power transistors; Pulse amplifiers; Pulse measurements; Radio frequency; Time measurement;
Conference_Titel :
Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
Print_ISBN :
0-7803-9433-X
DOI :
10.1109/APMC.2005.1607002
