DocumentCode
3416157
Title
New 3300V chip generation with a trench IGBT and an optimized field stop concept with a smooth switching behavior
Author
Pfaffenlehner, M. ; Biermann, J. ; Schaeffer, C. ; Schulze, H.
Author_Institution
Infineon Technol. AG, Munchen, Germany
fYear
2004
fDate
24-27 May 2004
Firstpage
107
Lastpage
110
Abstract
IGBT3 technology, with its trench cell and field stop is introduced for high voltage applications. The field stop concept has to be optimized, if modules with a high rated current are used in applications with a high stray inductance, to ensure the controllability of the voltage overshoot. The realized devices have greatly reduced losses in typical applications and allow an increase of the power output of converters.
Keywords
insulated gate bipolar transistors; isolation technology; power semiconductor switches; 3300 V; IGBT3 technology; converter power output increase; device ruggedness; high rated current modules; high voltage devices; optimized field stop construction; smooth IGBT switching behavior; stray inductance; trench IGBT; trench cell; voltage overshoot control; Insulated gate bipolar transistors; Isolation technology; Power semiconductor switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Print_ISBN
4-88686-060-5
Type
conf
DOI
10.1109/ISPSD.2004.1332872
Filename
1332872
Link To Document