DocumentCode
3416168
Title
Advanced HiGT with low-injection punch-through (LiPT) structure [high-conductivity IGBT]
Author
Oyama, K. ; Arai, T. ; Saitou, K. ; Masuda, K. ; Mori, M.
Author_Institution
Res. Lab., Hitachi Ltd., Ibaraki-Ken, Japan
fYear
2004
fDate
24-27 May 2004
Firstpage
111
Lastpage
114
Abstract
This paper describes a new advanced HiGT (high-conductivity IGBT) which is the combination of a low injection (LiPT: low injection punch-through) p-emitter and a planar gate with a hole barrier and punchthrough structure. The experimental results and theoretical discussion of this 4.5 kV advanced HiGT show remarkable low-loss characteristics and strong short-circuit immunity. These results prove for the first time that a hole barrier integrated in a planar IGBT is effective even with LiPT.
Keywords
insulated gate bipolar transistors; power bipolar transistors; power field effect transistors; 4.5 kV; LiPT emitter; high-conductivity IGBT; hole barrier; low-injection punch-through structure; low-loss HiGT; planar gate; short-circuit immunity; Insulated gate bipolar transistors; Power FETs; Power bipolar transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Print_ISBN
4-88686-060-5
Type
conf
DOI
10.1109/ISPSD.2004.1332873
Filename
1332873
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